Toshiba Memory Corporation, the world leader in memory solutions, has started sampling the industry’s first Universal Flash Storage (UFS) Ver. 3.0 embedded flash memory devices. The new line-up utilizes the company’s cutting-edge, 96-layer BiCS FLASH™ 3D flash memory and is available in three capacities: 128GB, 256GB and 512GB. With high-speed read/write performance and low power consumption, the new devices are suitable for applications such as mobile devices, smartphones, tablets, and augmented/virtual reality systems.
The new devices integrate 96-layer BiCS FLASH™ 3D flash memory and a controller in a JEDEC-standard 11.5 x 13.0mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management for simplified system development.
All three devices are compliant with JEDEC UFS Ver. 3.0, including HS-GEAR4, which has a theoretical interface speed of up to 11.6Gbps per lane (x2 lanes = 23.2Gbps) while also supporting features that suppress increases in power consumption. Sequential read and write performance of the 512GB device are improved by approximately 70 percent and 80 percent, respectively, over previous generation devices.